YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode

S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter

Specification Description
Low dark current, pre-molded packaging
These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface.

Characteristics
-S16838-01MS: Applicable to the visible light band
-S16838 /S16840-02MS: Applicable to the visible light to infrared band
-S16765-01MS: Applicable to the visible light to near-infrared band

Detailed parameters
The illuminated surface is 2.8 × 2.4 mm
Encapsulation plastic
Encapsulation category
Refrigerated non-cooled type
The spectral response range is 320 to 1100 nm
The maximum sensitivity wavelength (typical value) is 960 nm
Photosensitive sensitivity (typical value) : 0.58 A/W
Dark current (maximum value) 10 pA
Rise time (typical value) 2.5 μs
Junction capacitance (typical value) : 700 pF
Measurement conditions: Ta = 25°C, typical values, photosensitive sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified

Specifications:

YJJ S16838-02MS Silicon Photodiode

1100 nm Silicon Photodiode

320 nm Silicon Photodiode

YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode Images