Sign In | Join Free | My wpc-board.com
China ShenzhenYijiajie Electronic Co., Ltd. logo
ShenzhenYijiajie Electronic Co., Ltd.
The company advocates the corporate culture of "integrity and dedication, pragmatic innovation, unity and cooperation, diligence and progress", pays attention to standardized management, advocates
Verified Supplier

4 Years

Home > Infrared Photoelectric Sensor >

YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode

ShenzhenYijiajie Electronic Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode

Brand Name : HAMAMATSU

Model Number : S16838-02MS

Place of Origin : Japan

MOQ : 1

Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 1500

Delivery Time : 5-8 days

Packaging Details : Tube installation

Refrigeration : Non-cooled type

Spectral response range : 320 to 1100 nm

Maximum sensitivity wavelength : (Typical value) 960 nm

Photosensitive sensitivity (typical value) : 0.58 A/W

Dark current (maximum value) : 10 pA

Rise time (typical value) : 2.5 μs

Contact Now

S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter

Specification Description
Low dark current, pre-molded packaging
These photodiodes provide low dark current for high-precision measurement from low illumination to high illumination. Pre-molded packaging is designed to block stray light from the sides and back of the package to the light-receiving surface.


Characteristics
-S16838-01MS: Applicable to the visible light band
-S16838 /S16840-02MS: Applicable to the visible light to infrared band
-S16765-01MS: Applicable to the visible light to near-infrared band

Detailed parameters
The illuminated surface is 2.8 × 2.4 mm
Encapsulation plastic
Encapsulation category
Refrigerated non-cooled type
The spectral response range is 320 to 1100 nm
The maximum sensitivity wavelength (typical value) is 960 nm
Photosensitive sensitivity (typical value) : 0.58 A/W
Dark current (maximum value) 10 pA
Rise time (typical value) 2.5 μs
Junction capacitance (typical value) : 700 pF
Measurement conditions: Ta = 25°C, typical values, photosensitive sensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified

Specifications:

spectral response range 320 to 1100 nm
Illuminated surface 2.8 × 2.4 mm
Photosensitive sensitivity 0.58 A/W
Dark current (maximum value) 10 pA

YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon PhotodiodeYJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon PhotodiodeYJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode


Product Tags:

YJJ S16838-02MS Silicon Photodiode

      

1100 nm Silicon Photodiode

      

320 nm Silicon Photodiode

      
Wholesale YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode from china suppliers

YJJ S16838-02MS 320 to 1100 nm Silicon Photodiode With Filter , High Sensitivity Silicon Photodiode Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: ShenzhenYijiajie Electronic Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)